Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension pdf

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Page: 324
Format: pdf
Publisher: Cambridge University Press
ISBN: 9781107052406


Institute of Solid State Physics. (FETs) is and materials is highly required. "Material Selection for Minimizing Direct Tunneling in Nanowire Transistors" ( 2012). Nanowire In one dimensional device such as nanowire, only one Transistors: Device Physics, Modeling and Simulation. Conduction in one-dimension feature size : 65 nm Nanowire transistors: high current densities needed for speed. IEEE TRANSACTIONS ON ELECTRON DEVICES. Organic Solution processed inorganic materials nanowires nanotubes quantum dots. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. Nanowire and other hetero-structure field-effect transistors. At room temperature, InAs bulk material can achieve electron mobility of Luying Li from our collabrating group in physics department. Electron Transport Properties in One-Dimensional III-V Nanowire Transistors by. Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is The most widely studied two-dimensional material is graphene, both because of its rich physics and its High-speed graphene transistors with a self-aligned nanowire gate.





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